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VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 500V RDS(ON) (max) 60 ID(ON) (min) 150mA Order Number / Package TO-92 VN0550N3
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
11/12/01
SGD
TO-92
BVDSS BVDGS 20V
-55C to +150C 300C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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VN0550
Thermal Characteristics
Package TO-92 ID (continuous)* 78mA ID (pulsed) 250mA Power Dissipation @ TC = 25C 1.0W
jc
ja
IDR* 78mA
IDRM 250mA
C/W
125
C/W
170
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN0550 Min 500 2 -3.8 4 -5.0 100 10 1 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 150 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 300 50 100 350 45 40 1 100 45 8 2 55 10 5 10 15 10 10 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V, ID = 150mA, RGEN = 25 pF 60 1.7 %/C m Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = 1mA VGS = VDS , ID = 1mA VGS = VDS , ID = 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA VGS = 0V, VDS = 25V f = 1 MHz
mA
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD
RL OUTPUT
D.U.T.
VN0550
Typical Performance Curves
0.5 0.4
Output Characteristics
VGS = 10V
0.25
Saturation Characteristics
8V 6V
0.20
VGS = 10V
8V 6V
ID (amperes)
0.2 0.1 0
ID (amperes)
0.3
0.15 0.10 0.05
4V
0 10 20 30 VDS (volts) 40 50
4V
0 2
0
VDS (volts)
4
6
8
10
0.40 0.32
Transconductance vs. Drain Current
VDS = 25V TA = -55C
2.0
Power Dissipation vs. Case Temperature
GFS (siemens)
PD (watts)
0.24 0.16 0.08 0
TA = 25C TA = 125C
1.0
TO-92
0
0.1
ID (amperes)
0.2
0.3
0.4
0.5
0
0
25
50
TC (C)
75
100
125
150
1.0
Maximum Rated Safe Operating Area
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8 0.6 0.4 0.2 0 0.001
ID (amperes)
0.1 TO-92 (DC) 0.01
TO-92 PD = 1W TC = 25C
0.01 0.1 1 10
0.001
TC = 25C 1 10
VDS (volts)
100
1000
tp (seconds)
3
VN0550
Typical Performance Curves
BVDSS Variation with Temperature
100 1.1 80
On-Resistance vs. Drain Current
VGS = 5V
BVDSS (normalized)
RDS(ON) (ohms)
60
VGS = 10V
1.0
40
20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5
Tj (C) Transfer Characteristics
0.5
ID (amperes) V(th) and RDS Variation with Temperature
1.4 1.8
VDS = 25V
0.4
RDS(ON) @ 10V, 50mA
VGS(th) (normalized)
TA = -55 C
25C
1.2
1.4
0.3
V(th) @ 1mA
1.0 1.0
150C
0.2
0.8
0.6
0.1 0.6 0 0.2
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts) Capacitance vs. Drain-to-Source Voltage
100 10
Tj(C) Gate Drive Dynamic Characteristics
VDS = 10V
8
f = 1MHz
75
105 pF
C (picofarads)
VGS (volts)
6
50
CISS
VDS = 40V
4
112 pF
25 2
COSS
CRSS
0 0 10 20 30 40
50 pF
0 0 0.2 0.4 0.6 0.8 1.0
VDS (volts)
QG (nanocoulombs)
11/12/01
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
ID (amperes)

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